دیتاشیت FGL40N120ANDTU
مشخصات دیتاشیت
| نام دیتاشیت |
FGL40N120AND
|
| حجم فایل |
720.324
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
11
|
مشخصات
-
RoHS:
true
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Type:
NPT
-
Category:
Triode/MOS Tube/Transistor/IGBTs
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Datasheet:
onsemi FGL40N120ANDTU
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Operating Temperature:
-55°C~+150°C@(Tj)
-
Collector Current (Ic):
64A
-
Power Dissipation (Pd):
500W
-
Input Capacitance (Cies@Vce):
-
-
Turn?on Switching Loss (Eon):
2.3mJ
-
Pulsed Collector Current (Icm):
160A
-
Turn?off Switching Loss (Eoff):
1.1mJ
-
Diode Reverse Recovery Time (Trr):
112ns
-
Collector-Emitter Breakdown Voltage (Vces):
1200V
-
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
-
-
Package:
TO-264-3
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Manufacturer:
onsemi
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Series:
-
-
Packaging:
Tube
-
Part Status:
Not For New Designs
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IGBT Type:
NPT
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Voltage - Collector Emitter Breakdown (Max):
1200V
-
Current - Collector (Ic) (Max):
64A
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Current - Collector Pulsed (Icm):
160A
-
Vce(on) (Max) @ Vge, Ic:
3.2V @ 15V, 40A
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Power - Max:
500W
-
Switching Energy:
2.3mJ (on), 1.1mJ (off)
-
Input Type:
Standard
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Gate Charge:
220nC
-
Td (on/off) @ 25°C:
15ns/110ns
-
Test Condition:
600V, 40A, 5Ohm, 15V
-
Reverse Recovery Time (trr):
112ns
-
Mounting Type:
Through Hole
-
Package / Case:
TO-264-3, TO-264AA
-
Supplier Device Package:
TO-264-3
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Base Part Number:
FGL4
